The curious case of exploding quantum dots: Anomalous migration and growth behaviors of Ge under Si oxidation

Ching Chi Wang, Po Hsiang Liao, Ming Hao Kuo, Tom George, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si3N4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs 'explode,' regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kineticsbased model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 14 Jun 2013

Keywords

  • Germanium quantum-dot
  • Migration
  • Oxidation

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