The crystallization mechanism of poly-Si thin film using high-power Nd:YAG laser with gaussian beam profile

Hsiao-Wen Zan*, Chang Yu Huang, Kazuya Saito, Kouichi Tamagawa, Jack Chen, Tung Jung Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm2/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages335-340
Number of pages6
DOIs
StatePublished - 12 Jun 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 17 Apr 200621 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume910
ISSN (Print)0272-9172

Conference

Conference2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period17/04/0621/04/06

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    Zan, H-W., Huang, C. Y., Saito, K., Tamagawa, K., Chen, J., & Wu, T. J. (2007). The crystallization mechanism of poly-Si thin film using high-power Nd:YAG laser with gaussian beam profile. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 335-340). (Materials Research Society Symposium Proceedings; Vol. 910). https://doi.org/10.1557/PROC-0910-A14-03