The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition

Chun Yen Peng; Yuan An Liu; Wei Lin Wang; Jr Sheng Tian; Li Chang

doi:10.1063/1.4759032

The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition

Chun Yen Peng, Yuan An Liu, Wei Lin Wang, Jr Sheng Tian, Li Chang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.

Original language	English
Article number	151907
Journal	Applied Physics Letters
Volume	101
Issue number	15
DOIs	https://doi.org/10.1063/1.4759032
State	Published - 8 Oct 2012

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@article{beeb10682bc84f68804101f0bcbc5e42,

title = "The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition",

abstract = "Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.",

author = "Peng, {Chun Yen} and Liu, {Yuan An} and Wang, {Wei Lin} and Tian, {Jr Sheng} and Li Chang",

year = "2012",

month = oct,

day = "8",

doi = "10.1063/1.4759032",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition

AU - Peng, Chun Yen

AU - Liu, Yuan An

AU - Wang, Wei Lin

AU - Tian, Jr Sheng

AU - Chang, Li

PY - 2012/10/8

Y1 - 2012/10/8

N2 - Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.

AB - Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.

UR - http://www.scopus.com/inward/record.url?scp=84867517884&partnerID=8YFLogxK

U2 - 10.1063/1.4759032

DO - 10.1063/1.4759032

M3 - Article

AN - SCOPUS:84867517884

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 151907

ER -