The conductive property of ZnO QDs-SiO 2 and ZnO QDs-SiO xN y nanocomposite films

Yu Yun Peng, Tsung-Eong Hsien*, Chia Hung Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The dc and ac conductive properties of ZnO QDs-SiO 2 and ZnO QDs-SiO xN y nancomposite films prepared by the target-attached sputtering method are investigated. Both two nanocomposite samples reveal a typical characteristic of a metal-oxide varistor (MOV) on the J-E plots with distinct threshold electric fields (E th) which are affected by the molecular bonding configurations in the matrix and at the dot/matrix interfaces. The two systems exhibit dissimilar dependences of dc conductivity (σ dc) on the ZnO content, revealing the limitation of conventional percolation models in which the surface interaction term is usually ignored. The ac conduction behaviors of the two nanocomposite systems were also analyzed and their percolation concentrations V c (22.75% for ZnO QDs-SiO 2 and 20.78% for ZnO QDs-SiO xN y) are determined by the construction of master curves. Analytical results illustrated that the dielectric matrix type indeed affects the defect configuration and transport behaviors inside ZnO dots. Hence, manipulation of dielectric matrix type can possibly achieve various optical and electrical properties in ZnO QDs-dielectric nanocomposite systems.

Original languageEnglish
Pages (from-to)4892-4900
Number of pages9
JournalJournal of Nanoscience and Nanotechnology
Issue number8
StatePublished - 1 Aug 2009


  • Dielectric
  • Electrical properties
  • Nanocomposites
  • Percolation
  • ZnO

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