The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H. Hsueh, Cheng-Huang Kuo, S. J. Chang

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

Original languageEnglish
Pages (from-to)1639-1641
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 1 Dec 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

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