The characteristics of tunnel oxides grown on textured silicon surface with a simple and reliable process

Kow-Ming Chang*, Chii Horng Li, Bao Sheng Hsieh, Ji Yi Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this work, a simple and reliable method to fabricate a textured Si surface and the characteristics of oxides grown on the textured Si surface are proposed. The concept of different oxidation rate in poly-Si grain and grain boundaries has been used to form textured Si surface which does not need to etch the surface of Si wafer and is without the constraint of stopping the oxidation process on the poly-Si/Si-substrate interface to get better electrical characteristics. Tunnel oxide grown on the textured single crystalline Si exhibits much better electrical characteristics and reliabilities than those of oxides grown on poly-Si substrate (thin poly-Si film on Si substrate) and on untextured single crystalline Si substrate.

Original languageEnglish
Pages (from-to)355-361
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume46
Issue number2
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Charge-to-breakdown
  • Fn injection
  • Nonvolatile memory
  • Textured silicon surface
  • Tunnel oxides

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