The characteristics of n- and p-channel poly-si thin-film transistors with fully Ni-salicided S/D and gate structure

Po Yi Kuo*, Yan Syue Huang, Yi Hsien Lue, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

n- and p-channel poly-Si thin-film transistors with fully Ni-self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate structure (n- and p-channel FUSA-TFTs) have been successfully fabricated on a 40 nm thick channel layer. The conventional poly-Si gate is replaced by the fully Ni-silicided gate, and the parasitic S/D resistance of the FUSA-TFTs is significantly reduced by the fully Ni-silicided S/D structure. The fully Ni-salicidation process is executed at a low temperature of 500°C for a short rapid thermal annealing time. Experimental results show that the FUSA-TFTs give increased on/off current ratio, improved subthreshold characteristics, less threshold voltage roll-off, lower parasitic S/D resistance, higher gate capacitance, and larger field-effect mobility than conventional TFTs. The FUSA-TFTs effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FUSA-TFTs are suitable for three-dimensional integration applications and high performance driver circuits in the active-matrix liquid crystal displays.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number1
DOIs
StatePublished - 1 Jan 2010

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