The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode

Wen Tai Lu*, Po Ching Lin, Tiao Yuan Huang, Chao-Hsin Chien, Ming Jui Yang, Ing Jyi Huang, Peer Lehnen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The characteristics of charge trapping during constant voltage stress in an n-type metal-oxide-semiconductor capacitor with HfO2/SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (ΔVfb) is mainly caused by the trap filling instead of the trap creation [Zafar et al., J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode.

Original languageEnglish
Pages (from-to)3525-3527
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number16
DOIs
StatePublished - 18 Oct 2004

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