The characteristics of a high-Q GaN micro-cavity light emitting diodes

Chih Chiang Kao*, Tien-Chang Lu, Tsung Ting Kao, Li Fan Lin, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0.52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 1 Dec 2007
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: 6 May 200711 May 2007

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Conference

ConferenceConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period6/05/0711/05/07

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