The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guol*, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, Cheng-Huang Kuo, C. J. Tun, J. W. Shi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
DOIs
StatePublished - 16 Nov 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2 Jun 20094 Jun 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period2/06/094/06/09

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