TFT materials and devices

Po Tsun Liu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

Original languageEnglish
Title of host publicationEncyclopedia of Modern Optics
PublisherElsevier
Pages12-16
Number of pages5
Volume1-5
ISBN (Electronic)9780128149829
ISBN (Print)9780128092835
DOIs
StatePublished - 1 Jan 2018

Keywords

  • A-Si:H TFT
  • AOS TFT
  • Device reliability
  • Field-effect mobility
  • Leakage current
  • On-state current
  • OTFT
  • Poly-Si TFT
  • Subthreshold
  • Thin film transistor

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