Testing Methodology of Embedded DRAMs

Chi Min Chang*, Chia-Tso Chao, Rei Fu Huangt, Ding Yuan Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The embedded-DRAMtesting mixes up the techniques used for DRAM testing and SRAM testing since an embedded- DRAM core combines DRAM cells with an SRAM interface (the so-called 1 T-SRAM architecture). In this paper, we first present our test algorithm for embedded-DRAM testing. A theoretical analysis to the leakage mechanisms of a switch transistor is also provided, based on that we can test the embedded-DRAM at a higher temperature to reduce the total test time and maintain the same retention-fault coverage. Theexperimental results are collected based on 1-lot wafers with an 16Mb embedded DRAM core.

Original languageEnglish
Title of host publicationProceedings - International Test Conference 2008, ITC 2008
DOIs
StatePublished - 1 Dec 2008
EventInternational Test Conference 2008, ITC 2008 - Santa Clara, CA, United States
Duration: 28 Oct 200830 Oct 2008

Publication series

NameProceedings - International Test Conference
ISSN (Print)1089-3539

Conference

ConferenceInternational Test Conference 2008, ITC 2008
CountryUnited States
CitySanta Clara, CA
Period28/10/0830/10/08

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    Chang, C. M., Chao, C-T., Huangt, R. F., & Chen, D. Y. (2008). Testing Methodology of Embedded DRAMs. In Proceedings - International Test Conference 2008, ITC 2008 [4700618] (Proceedings - International Test Conference). https://doi.org/10.1109/TEST.2008.4700618