Test and analysis of the ESD robustness for the diode-connected a-IGZO thin film transistors

Ya-Hsiang Tai, Hao Lin Chiu, Lu Sheng Chou

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Abstract

In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N2O and O2 treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.

Original languageEnglish
Article number6512564
Pages (from-to)613-618
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number8
DOIs
StatePublished - 10 May 2013

Keywords

  • Amorphous Indium-Gallium-Zinc Oxide thin film transistor (a-IGZO TFT)
  • electrostatic discharge (ESD)

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