Terahertz InP HBT Oscillators

Jae Sung Rieh, Jongwon Yun, Daekeun Yoon, Jungsoo Kim, Heekang Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538659717
DOIs
StatePublished - 5 Nov 2018
Event2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia
Duration: 15 Aug 201817 Aug 2018

Publication series

Name2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

Conference

Conference2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
CountryAustralia
CityMelbourne
Period15/08/1817/08/18

Keywords

  • heterojunction bipolar transistors (HBT)
  • oscillators
  • Submillimeter wave circuits

Fingerprint Dive into the research topics of 'Terahertz InP HBT Oscillators'. Together they form a unique fingerprint.

Cite this