TY - GEN
T1 - Terahertz InP HBT Oscillators
AU - Rieh, Jae Sung
AU - Yun, Jongwon
AU - Yoon, Daekeun
AU - Kim, Jungsoo
AU - Son, Heekang
PY - 2018/11/5
Y1 - 2018/11/5
N2 - An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.
AB - An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.
KW - heterojunction bipolar transistors (HBT)
KW - oscillators
KW - Submillimeter wave circuits
UR - http://www.scopus.com/inward/record.url?scp=85057741213&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2018.8524043
DO - 10.1109/RFIT.2018.8524043
M3 - Conference contribution
AN - SCOPUS:85057741213
T3 - 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
BT - 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 15 August 2018 through 17 August 2018
ER -