Terahertz emission of magnesium doped indium nitride

Y. J. Yeh, H. Ahn*, Y. L. Hong, Shangjr Gwo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN: Mg.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528896
DOIs
StatePublished - 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: 16 May 201021 May 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period16/05/1021/05/10

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