Terahertz emission of magnesium doped indium nitride

Y. J. Yeh*, Hyeyoung Ahn, Y. L. Hong, Shangjr Gwo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
DOIs
StatePublished - 11 Oct 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: 16 May 201021 May 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Conference

ConferenceLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period16/05/1021/05/10

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    Yeh, Y. J., Ahn, H., Hong, Y. L., & Gwo, S. (2010). Terahertz emission of magnesium doped indium nitride. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5500646] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010). https://doi.org/10.1364/CLEO.2010.CMJJ4