Terahertz emission mechanism of magnesium doped indium nitride

Hyeyoung Ahn*, Y. J. Yeh, Y. L. Hong, S. Gwo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report carrier concentration-dependence of terahertz emission from magnesium doped indium nitride (InN:Mg) films. Near the critical concentration (nc ∼1× 1018 cm-3), the competition between two emission mechanisms determines the polarity of terahertz emission. InN:Mg with n> nc exhibits enhanced positive polarity terahertz emission compared to the undoped InN, which is due to the reduced screening of the photo-Dember field. For InN:Mg with n< nc, the polarity of terahertz signal changes to negative, indicating the dominant contribution of the surface electric field due to the large downward surface band bending within the surface layer extending over the optical absorption depth.

Original languageEnglish
Article number232104
JournalApplied Physics Letters
Volume95
Issue number23
DOIs
StatePublished - 18 Dec 2009

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