Temperature instability of amorphous In-Ga-Zn-O thin film transistors

Yih Shing Lee, Sheng Kai Fan, Chii Wen Chen, Tung Wei Yen, Horng-Chih Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.

Original languageEnglish
Title of host publication2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
Pages153-154
Number of pages2
DOIs
StatePublished - 29 Nov 2013
Event2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 - Hsinchu, Taiwan
Duration: 6 Jul 20139 Jul 2013

Publication series

Name2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

Conference

Conference2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
CountryTaiwan
CityHsinchu
Period6/07/139/07/13

Keywords

  • In-Ga-Zn-O
  • PECVD TEOS
  • sub-threshold swing
  • temperature Instability
  • thermal activation energy

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