Temperature insensitive PA bias circuit with digital control interface using InGaP/GaAs HBT technology

Wei Ling Chang, Chin-Chun Meng, Shyh Chyi Wong, Hwey Chien, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper demonstrates a new temperature insensitive bias circuit using a Wilson current mirror for the InGaP/GaAs HBT power amplifier. The Wilson current mirror has a high impedance node for connecting an on/off digital interface and a stable voltage node for injection of feedback signals to achieve a temperature insensitive bias. The fabricated output stage of the power amplifier with the feedback through the Wilson current source shows a stable bias current with current variation from 186 mA to 182 mA for the temperature range from 25 °C to 200 °C. A bias circuit without the feedback through the Wilson current source is also fabricated for comparison and shows a strong bias current variation over temperature.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015
Subtitle of host publication"Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1283-1286
Number of pages4
ISBN (Electronic)9782874870392
DOIs
StatePublished - 2 Dec 2015
Event45th European Microwave Conference, EuMC 2015 - Paris, France
Duration: 7 Sep 201510 Sep 2015

Publication series

NameEuropean Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC

Conference

Conference45th European Microwave Conference, EuMC 2015
CountryFrance
CityParis
Period7/09/1510/09/15

Keywords

  • InGaP/GaAs HBT
  • power amplifier
  • temperature insensitive
  • Wilson current mirror

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  • Cite this

    Chang, W. L., Meng, C-C., Wong, S. C., Chien, H., & Huang, G. W. (2015). Temperature insensitive PA bias circuit with digital control interface using InGaP/GaAs HBT technology. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC (pp. 1283-1286). [7346005] (European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2015.7346005