Abstract
In this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-mu m CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance of the gyrator. Based on the temperature-compensated gyrator, the measured resonate frequency variation of the proposed gyrator-based active LC-tank circuit topology is less than 1% from 8.72% when the temperature varies from -20 to +60 degree centigrade (C-0). The value of frequency variation percentage over per degree centigrade is simply 0.012 which presents a lowest frequency variation than the traditional gyrator topology.
Original language | English |
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Title of host publication | 44th European Microwave Conference (EuMC) |
Pages | 711-714 |
Number of pages | 4 |
DOIs | |
State | Published - 2014 |
Keywords
- Gyrator; temperature compensation; active inductor; proportional to absolute temperature (PTAT)
- CMOS; VCO