In this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-mu m CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance of the gyrator. Based on the temperature-compensated gyrator, the measured resonate frequency variation of the proposed gyrator-based active LC-tank circuit topology is less than 1% from 8.72% when the temperature varies from -20 to +60 degree centigrade (C-0). The value of frequency variation percentage over per degree centigrade is simply 0.012 which presents a lowest frequency variation than the traditional gyrator topology.
|Title of host publication||44th European Microwave Conference (EuMC)|
|Number of pages||4|
|State||Published - 2014|
- Gyrator; temperature compensation; active inductor; proportional to absolute temperature (PTAT)
- CMOS; VCO
Lin, C. Y., Lin, W. T., Rao, P. Z., & Chung, S-J. (2014). Temperature-Insensitive Gyrator-based Active Inductor with the Complementary Technique and Its Applications. In 44th European Microwave Conference (EuMC) (pp. 711-714) https://doi.org/10.1109/EuMC.2014.6986533