Temperature effects on MOSFET driving capability and voltage gain

K. Chen*, J. H. Huang, J. Z. Ma, Z. H. Liu, M. C. Jeng, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This paper attempts to discuss some important temperature effects on MOSFET analogue applications. For this purpose, measurement data taken over wide ranges of temperature (91 400 K) and channel length (0.35-50 μm) on MOSFET driving capability, output resistance, and voltage gain are presented. It is shown that low temperature has greater benefit on current driving capability for analogue devices which have longer L and lower V g values than digital ones. For constant voltage (V g - V l ) bias, output resistance and voltage gain drop at low temperatures. However, under the constant current I ds bias, considerably higher gain can be achieved at low temperatures.

Original languageEnglish
Pages (from-to)699-701
Number of pages3
JournalSolid-State Electronics
Volume39
Issue number5
DOIs
StatePublished - 1 Jan 1996

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    Chen, K., Huang, J. H., Ma, J. Z., Liu, Z. H., Jeng, M. C., Ko, P. K., & Hu, C-M. (1996). Temperature effects on MOSFET driving capability and voltage gain. Solid-State Electronics, 39(5), 699-701. https://doi.org/10.1016/0038-1101(95)00197-2