Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Ramesh Kumar Kakkerla, Deepak Anandan, Chih Jen Hsiao, Hung Wei Yu, Sankalp Kumar Singh, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

Original languageEnglish
Pages (from-to)19-24
Number of pages6
JournalJournal of Crystal Growth
Volume490
DOIs
StatePublished - 15 May 2018

Keywords

  • A1. Interfaces
  • A3. Metal organic chemical vapor deposition
  • B1. Antimonides
  • B1. Nanomaterials
  • B2. Semiconducting III–V materials
  • B3. Heterojunction semiconductor devices

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