Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell

Mu Yi Liu*, Yao Wen Chang, Nian Ki Zous, Ichen Yang, Tao Cheng Lu, Ta-Hui Wang, Wenchi Ting, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.

Original languageEnglish
Pages (from-to)495-497
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number7
DOIs
StatePublished - 1 Jul 2004

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    Liu, M. Y., Chang, Y. W., Zous, N. K., Yang, I., Lu, T. C., Wang, T-H., Ting, W., Ku, J., & Lu, C. Y. (2004). Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell. IEEE Electron Device Letters, 25(7), 495-497. https://doi.org/10.1109/LED.2004.830275