Abstract
The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.
Original language | English |
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Pages (from-to) | 495-497 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 25 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 2004 |