Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell

Mu Yi Liu; Yao Wen Chang; Nian Ki Zous; Ichen Yang; Tao Cheng Lu; Ta-Hui Wang; Wenchi Ting; Joseph Ku; Chih Yuan Lu

doi:10.1109/LED.2004.830275

Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell

Mu Yi Liu^*, Yao Wen Chang, Nian Ki Zous, Ichen Yang, Tao Cheng Lu, Ta-Hui Wang, Wenchi Ting, Joseph Ku, Chih Yuan Lu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V _T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V _T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.

Original language	English
Pages (from-to)	495-497
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	7
DOIs	https://doi.org/10.1109/LED.2004.830275
State	Published - 1 Jul 2004

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title = "Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell",

abstract = " The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.",

author = "Liu, {Mu Yi} and Chang, {Yao Wen} and Zous, {Nian Ki} and Ichen Yang and Lu, {Tao Cheng} and Ta-Hui Wang and Wenchi Ting and Joseph Ku and Lu, {Chih Yuan}",

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AU - Liu, Mu Yi

AU - Chang, Yao Wen

AU - Zous, Nian Ki

AU - Yang, Ichen

AU - Lu, Tao Cheng

AU - Wang, Ta-Hui

AU - Ting, Wenchi

AU - Ku, Joseph

AU - Lu, Chih Yuan

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.

AB - The temperature effect on the read current of a two-bit nitride-storage Flash memory cell is investigated. In contrast to a conventional silicon-oxide-nitride-oxide (SONOS) cell with uniform Fowler-Nordheim (FN) programming, a significant high-V T state read current increase, which results in the read window narrowing at high temperature, is observed in a channel hot electron (CHE) programmed cell. The increment of high-V T state leakage current shows a positive correlation with program/erase threshold voltage window. Since the temperature effect is very sensitive to a locally trapped charge profile, a two-dimensional simulation with a step charge profile is employed to characterize the relationship between current increment and both charge width and charge density.

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