Temperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices With Thin Titanium Oxide Capping Layers

Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ping Chiou, Yu Chien Chiu, Shiang Shiou Yen, Chien-Hung Tung, Chun-Yen Chang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm(2)/V.s under a low drive voltage of < 2 V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.
Original languageEnglish
Pages (from-to)512-517
JournalIEEE/OSA Journal of Display Technology
Volume11
Issue number6
DOIs
StatePublished - Jun 2015

Keywords

  • Indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); titanium oxide (TiOx); zirconium oxide (ZrO2)
  • FILM; TRANSISTORS; TFT

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