Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETs

Ming-Jer Chen, Sou-Chi Chang, Shin-Jiun Kuang, Chien-Chih Lee, Wei-Han Lee, Kuan-Hao Cheng, Yi-Hsien Zhan

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Additional electron mobility due to remote scatterers in n(+)-polysilicon 1.65-nm gate oxide (SiO2) n-channel metal-oxide-semiconductor field-effect transistors is experimentally extracted at three different temperatures (i.e., 233, 263, and 298 K). The core of the extraction process consists of simulated temperature-dependent universal mobility curves and Matthiessen's rule in a mobility universality region. Resulting additional mobility for the first time experimentally exhibits a negative temperature coefficient, confirming interface plasmons in a polysilicon depletion region to be dominant remote Coulomb scatterers. We also present corroborative evidence as quoted in the literature, including: 1) calculated temperature-dependent remote Coulomb mobility due to ionized impurity atoms in a polysilicon depletion region; 2) experimentally assessed additional mobility at room temperature; and 3) simulated remote Coulomb mobility due to interface plasmons in a polysilicon depletion region as well as its temperature coefficient. Validity of Matthiessen's rule used in this paper is verified.
Original languageEnglish
Pages (from-to)1038-1044
Number of pages7
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - Apr 2011

Keywords

  • Gate oxide; high-k; interface plasmons; metal gate; mobility; metal-oxide-semiconductor field-effect transistors (MOSFETs); phonons; polysilicon; remote Coulomb; scattering; surface roughness
  • FIELD-EFFECT-TRANSISTORS; SILICON INVERSION-LAYERS; BACKSCATTERING COEFFICIENT EXTRACTION; SMALL SI DEVICES; SURFACE-ROUGHNESS; N-MOSFETS; PART II; SCATTERING; TRANSPORT

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