The effects of nitrogen incorporation into the In0.4Ga 0.6As1-xNx/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2-3 nm in size was found in the interface of In 0.4Ga0.6As0.98N0.02 and GaAs. Our investigations indicate that high nitrogen incorporation into the In 0.4Ga0.6As1-xNx/GaAs system influenced carrier localization and might cause the formation of the dot-like states.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 5 Aug 2005|
- Quantum-dot-like state
- Strain compensation