Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers

Fang I. Lai*, Hao-Chung Kuo, Ya Hsien Chang, Min Ying Tsai, Chia Pu Chu, Shou Yi Kuo, Shing Chung Wang, Nelson Tansu, Jeng Ya Yeh, Luke J. Mawst

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The effects of nitrogen incorporation into the In0.4Ga 0.6As1-xNx/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2-3 nm in size was found in the interface of In 0.4Ga0.6As0.98N0.02 and GaAs. Our investigations indicate that high nitrogen incorporation into the In 0.4Ga0.6As1-xNx/GaAs system influenced carrier localization and might cause the formation of the dot-like states.

Original languageEnglish
Pages (from-to)6204-6207
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number8
DOIs
StatePublished - 5 Aug 2005

Keywords

  • 1.3μm
  • InGaAsN
  • Quantum-dot-like state
  • Strain compensation
  • VCSEL

Fingerprint Dive into the research topics of 'Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers'. Together they form a unique fingerprint.

Cite this