Temperature dependent integrity of Sr0.8Bi2Ta2O9 films on ultra-thin Al2O3 buffered Si

Bang Chiang Lan, San-Yuan Chen*, Hsin Yi Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The annealing temperature dependent integrity of Sr0.8Bi2Ta2O9 (SBT) on ultra-thin 4 nm SiO2 and Al2O3 buffered Si was investigated in this work. Although the capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of Sr0.8Bi2Ta2O9/Al2O3 capacitor is larger than that of Sr0.8Bi2Ta2O9/SiO2 capacitor. As increasing annealing temperature from 800 to 900°C, the grain size and memory window of polycrystalline SBT increase both cases. At 800°C, the leakage current density of Sr0.8Bi2Ta2O9/Al2O3 capacitor is 3.2×10-8 A/cm2 at -3 V, which is low enough for deep sub-μm application. With increasing temperature to 900°C, the leakage current in both structures becomes smaller.

Original languageEnglish
Pages (from-to)325-328
Number of pages4
JournalMaterials Chemistry and Physics
Volume80
Issue number1
DOIs
StatePublished - 29 Apr 2003

Keywords

  • AlO buffer
  • Leakage current
  • Memory window
  • SrBiTaO (SBT)

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