Temperature-dependent electroluminescence efficiency in blue InGaN-GaN light-emitting diodes with different well widths

C. H. Wang, J. R. Chen, C. H. Chiu, Hao-Chung Kuo, Y. L. Li, Tien-Chang Lu, S. C. Wang

Research output: Contribution to journalArticlepeer-review

81 Scopus citations

Abstract

Temperature dependence of electroluminescence (EL) efficiency in blue InGaN-GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different well widths is systematically investigated. The EL efficiency at 300 K shows a maximum at the input current of 4, 10, and 60 mA for the LEDs with 1.5-, 2.0-, and 2.5-nm QWs, respectively. Nevertheless, the droop behavior at 80 K is mainly dominated by the low hole mobility and near independence on the QW thickness. According to the simulation results, it Is found that the distinct efficiency droop behavior for the LEDs with different well widths at high and low temperature is strongly dependent on the effects of electron overflow and nonuniform hole distribution within the MQW region.

Original languageEnglish
Article number5378542
Pages (from-to)236-238
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number4
DOIs
StatePublished - 15 Feb 2010

Keywords

  • Efficiency droop
  • Electroluminescence (EL)
  • Lightemitting diodes (LEDs)
  • Quantum wells (QWs)

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