Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition

I. Ju Teng; Hui Lin Hsu; Sheng Rui Jian; Li Chun Wang; Kai Ling Chen; Cheng Tzu Kuo; Fu-Ming Pan; Wei Hsiang Wang; Jenh-Yih Juang

doi:10.1016/j.tsf.2012.09.019

Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition

I. Ju Teng, Hui Lin Hsu, Sheng Rui Jian^*, Li Chun Wang, Kai Ling Chen, Cheng Tzu Kuo, Fu-Ming Pan, Wei Hsiang Wang, Jenh-Yih Juang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm ²/V·s and an on-off current ratio of ∼ 10³. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.

Original language	English
Pages (from-to)	190-194
Number of pages	5
Journal	Thin Solid Films
Volume	529
DOIs	https://doi.org/10.1016/j.tsf.2012.09.019
State	Published - 1 Feb 2013

Keywords

Carbon nanotube networks (CNT-NWs)
CNT-NW-assisted devices
Electrical properties
Horizontally-oriented interconnected
Microwave plasma chemical vapor deposition
Photo-sensing properties
Sandwich-growth

Access to Document

10.1016/j.tsf.2012.09.019

Fingerprint Dive into the research topics of 'Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition'. Together they form a unique fingerprint.

Cite this

Teng, I. J., Hsu, H. L., Jian, S. R., Wang, L. C., Chen, K. L., Kuo, C. T., Pan, F-M., Wang, W. H., & Juang, J-Y. (2013). Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition. Thin Solid Films, 529, 190-194. https://doi.org/10.1016/j.tsf.2012.09.019

Teng, I. Ju ; Hsu, Hui Lin ; Jian, Sheng Rui ; Wang, Li Chun ; Chen, Kai Ling ; Kuo, Cheng Tzu ; Pan, Fu-Ming ; Wang, Wei Hsiang ; Juang, Jenh-Yih. / Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition. In: Thin Solid Films. 2013 ; Vol. 529. pp. 190-194.

@article{8aff6a5d81b5478c88a996b5776b9384,

title = "Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition",

abstract = "The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm 2/V·s and an on-off current ratio of ∼ 103. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.",

keywords = "Carbon nanotube networks (CNT-NWs), CNT-NW-assisted devices, Electrical properties, Horizontally-oriented interconnected, Microwave plasma chemical vapor deposition, Photo-sensing properties, Sandwich-growth",

author = "Teng, {I. Ju} and Hsu, {Hui Lin} and Jian, {Sheng Rui} and Wang, {Li Chun} and Chen, {Kai Ling} and Kuo, {Cheng Tzu} and Fu-Ming Pan and Wang, {Wei Hsiang} and Jenh-Yih Juang",

year = "2013",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2012.09.019",

language = "English",

volume = "529",

pages = "190--194",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition. / Teng, I. Ju; Hsu, Hui Lin; Jian, Sheng Rui; Wang, Li Chun; Chen, Kai Ling; Kuo, Cheng Tzu; Pan, Fu-Ming; Wang, Wei Hsiang; Juang, Jenh-Yih.

In: Thin Solid Films, Vol. 529, 01.02.2013, p. 190-194.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition

AU - Teng, I. Ju

AU - Hsu, Hui Lin

AU - Jian, Sheng Rui

AU - Wang, Li Chun

AU - Chen, Kai Ling

AU - Kuo, Cheng Tzu

AU - Pan, Fu-Ming

AU - Wang, Wei Hsiang

AU - Juang, Jenh-Yih

PY - 2013/2/1

Y1 - 2013/2/1

N2 - The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm 2/V·s and an on-off current ratio of ∼ 103. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.

AB - The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm 2/V·s and an on-off current ratio of ∼ 103. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.

KW - Carbon nanotube networks (CNT-NWs)

KW - CNT-NW-assisted devices

KW - Electrical properties

KW - Horizontally-oriented interconnected

KW - Microwave plasma chemical vapor deposition

KW - Photo-sensing properties

KW - Sandwich-growth

UR - http://www.scopus.com/inward/record.url?scp=84873702659&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.09.019

DO - 10.1016/j.tsf.2012.09.019

M3 - Article

AN - SCOPUS:84873702659

VL - 529

SP - 190

EP - 194

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -