Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition

I. Ju Teng, Hui Lin Hsu, Sheng Rui Jian*, Li Chun Wang, Kai Ling Chen, Cheng Tzu Kuo, Fu-Ming Pan, Wei Hsiang Wang, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm 2/V·s and an on-off current ratio of ∼ 103. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.

Original languageEnglish
Pages (from-to)190-194
Number of pages5
JournalThin Solid Films
Volume529
DOIs
StatePublished - 1 Feb 2013

Keywords

  • Carbon nanotube networks (CNT-NWs)
  • CNT-NW-assisted devices
  • Electrical properties
  • Horizontally-oriented interconnected
  • Microwave plasma chemical vapor deposition
  • Photo-sensing properties
  • Sandwich-growth

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