This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe 0.950Te 0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10-300 K), indicating strong carrier localization. Kohlrausch's stretched exponential law, in which the deduced stretching exponent is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons.