Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures

Jyh Liang Wang*, Yi Sheng Lai, Bi Shiou Chiou, Chen Chia Chou, Trent Gwo Yann Lee, Huai Yuan Tseng, Chueh Kuei Jan, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300-450 °C, has been investigated. As Ts increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance-electric field (C-E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume90
Issue number1
DOIs
StatePublished - 1 Jan 2008

Fingerprint Dive into the research topics of 'Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO<sub>3</sub> films at low temperatures'. Together they form a unique fingerprint.

Cite this