Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300-450 °C, has been investigated. As Ts increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance-electric field (C-E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C.
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - 1 Jan 2008|