Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen*, Wei Chou Hsu, Tsin Dong Lee, Ke Hua Su, Chih Hung Chiou, Kuo-Jui Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

Original languageEnglish
Article number011
Pages (from-to)886-889
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number7
DOIs
StatePublished - 30 May 2006

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