Temperature-dependent carrier-phonon coupling in topological insulator Bi 2 Se 3

Yi Ping Lai*, Hsueh Ju Chen, Kaung-Hsiung Wu, Jia Ming Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Temperature-dependent (11.0K-294.5 K) carrier-phonon coupling in Bi 2 Se 3 is investigated by ultrafast pump-probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron-phonon coupling constant of the bulk state (λ = 0:63±0:05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon-phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators.

Original languageEnglish
Article number232110
JournalApplied Physics Letters
Volume105
Issue number23
DOIs
StatePublished - 8 Dec 2014

Fingerprint Dive into the research topics of 'Temperature-dependent carrier-phonon coupling in topological insulator Bi <sub>2</sub> Se <sub>3</sub>'. Together they form a unique fingerprint.

Cite this