In this letter, the capacitance characteristics of RF LDMOS transistors with different temperatures and layout structures were studied. In a conventional fishbone structure, the peaks in capacitances decrease with increasing temperature. For the ring structure, two peaks in a capacitance-voltage curve have been observed at high drain voltages due to the additional corner effect. in addition, peaks in gate-to-source/body capacitance decrease and peaks in gate-to-drain capacitance increase with increasing temperature at high drain voltages. By analyzing the effects of temperature on threshold voltage, quasi-saturation current, and drift depletion capacitance, the variations of capacitances with temperature were investigated.
- capacitance; drift region; laterally diffused MOS (LDMOS); layout structure; nonuniform doping; temperature
- MOSFETS; DEVICE
Hu, H-H., Chen, K-M., Huang, G-W., Chen, M. Y., Cheng, E., Yang, Y. C., & Chang, C-Y. (2008). Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures. IEEE Electron Device Letters, 29(7), 784-787. https://doi.org/10.1109/LED.2008.2000648