Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures

Hsin-Hui Hu, Kun-Ming Chen, Guo-Wei Huang, Ming Yi Chen, Eric Cheng, Yu Chi Yang, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this letter, the capacitance characteristics of RF LDMOS transistors with different temperatures and layout structures were studied. In a conventional fishbone structure, the peaks in capacitances decrease with increasing temperature. For the ring structure, two peaks in a capacitance-voltage curve have been observed at high drain voltages due to the additional corner effect. in addition, peaks in gate-to-source/body capacitance decrease and peaks in gate-to-drain capacitance increase with increasing temperature at high drain voltages. By analyzing the effects of temperature on threshold voltage, quasi-saturation current, and drift depletion capacitance, the variations of capacitances with temperature were investigated.
Original languageEnglish
Pages (from-to)784-787
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
StatePublished - Jun 2008

Keywords

  • capacitance; drift region; laterally diffused MOS (LDMOS); layout structure; nonuniform doping; temperature
  • MOSFETS; DEVICE

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