Temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage MOSFET

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Sheng Yi Huang, Cheng Chou Hung, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (-25 to 125°C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (ft and fmax), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009
Subtitle of host publicationScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages69-72
Number of pages4
StatePublished - 28 Dec 2009
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
Duration: 28 Sep 20092 Oct 2009

Publication series

NameEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Conference

ConferenceEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
CountryItaly
CityRome
Period28/09/092/10/09

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