Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

C. H. Lin; H. S. Lin; C. C. Huang; S. K. Su; Sheng-Di Lin; Kien-Wen Sun; C. P. Lee; Y. K. Liu; M. D. Yang; J. L. Shen

doi:10.1063/1.3130741

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, Sheng-Di Lin, Kien-Wen Sun, C. P. Lee, Y. K. Liu, M. D. Yang, J. L. Shen

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

Original language	English
Article number	183101
Journal	Applied Physics Letters
Volume	94
Issue number	18
DOIs	https://doi.org/10.1063/1.3130741
State	Published - 18 May 2009

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title = "Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring",

abstract = "We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.",

author = "Lin, {C. H.} and Lin, {H. S.} and Huang, {C. C.} and Su, {S. K.} and Sheng-Di Lin and Kien-Wen Sun and Lee, {C. P.} and Liu, {Y. K.} and Yang, {M. D.} and Shen, {J. L.}",

year = "2009",

month = may,

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doi = "10.1063/1.3130741",

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T1 - Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

AU - Lin, C. H.

AU - Lin, H. S.

AU - Huang, C. C.

AU - Su, S. K.

AU - Lin, Sheng-Di

AU - Sun, Kien-Wen

AU - Lee, C. P.

AU - Liu, Y. K.

AU - Yang, M. D.

AU - Shen, J. L.

PY - 2009/5/18

Y1 - 2009/5/18

N2 - We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

AB - We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

UR - http://www.scopus.com/inward/record.url?scp=65549101028&partnerID=8YFLogxK

U2 - 10.1063/1.3130741

DO - 10.1063/1.3130741

M3 - Article

AN - SCOPUS:65549101028

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183101

ER -

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

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