Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, Sheng-Di Lin, Kien-Wen Sun, C. P. Lee, Y. K. Liu, M. D. Yang, J. L. Shen

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Abstract

We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

Original languageEnglish
Article number183101
JournalApplied Physics Letters
Volume94
Issue number18
DOIs
StatePublished - 18 May 2009

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