Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels

Che Yu Yang*, Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Chi Shen Chen, Chun Hao Tu, Chun Yen Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have investigated the temperature dependent electrical characteristics of lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths from 25°C to 175°C. The ten 67 nm-wide split channels TFT has best transfer characteristics, because of it's robust trigate control and grain boundary defects is the lowest, due to its split nano-wires structure with effective NH3 plasma passivation.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages500-502
Number of pages3
StatePublished - 1 Dec 2005
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period21/02/0524/02/05

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