Temperature dependence of high frequency noise behaviors for RF MOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (ig), channel noise current (id) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation noise current are found to rise as temperature increases, and decline for the channel noise current. Moreover, by using van der Ziel's noise model, our experimental results show that, besides ambient temperature, the channel conductance is the main factor dominating the RF noise behaviors. Finally, bias dependence results are also presented.

Original languageEnglish
Article number4588990
Pages (from-to)530-533
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number8
DOIs
StatePublished - 1 Aug 2008

Keywords

  • Metal oxide semiconductor field effect transistors (MOSFETs)
  • Noise
  • Radio frequency (RF)
  • Temperature
  • Van der Ziel's model

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