Temperature dependence of excitonic emission in cubic CdSe thin film

C. H. Chia*, C. T. Yuan, J. T. Ku, S. L. Yang, Wu-Ching Chou, Jenh-Yih Juang, S. Y. Hsieh, K. C. Chiu, J. S. Hsu, S. Y. Jeng

*Corresponding author for this work

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A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalJournal of Luminescence
Issue number1
StatePublished - 1 Jan 2008


  • Cadmium selenide
  • Exciton binding energy
  • Exciton-phonon interaction
  • Photoluminescence
  • Temperature dependence
  • Thin film

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    Chia, C. H., Yuan, C. T., Ku, J. T., Yang, S. L., Chou, W-C., Juang, J-Y., Hsieh, S. Y., Chiu, K. C., Hsu, J. S., & Jeng, S. Y. (2008). Temperature dependence of excitonic emission in cubic CdSe thin film. Journal of Luminescence, 128(1), 123-128. https://doi.org/10.1016/j.jlumin.2007.06.003