Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structures

Hisayo Sasaki Momose*, Youichiro Niitsu, Hiroshi Iwai, Kenji Maeguchi

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

10 Scopus citations

Abstract

Different degradation modes were observed under high and low reverse stress current conditions. The temperature dependence of the degradation was studied, and it was found that the degradation is greatest around 50°C. The mechanisms of the degradation and its recovery were also investigated, using MOS structures and simulation. MOSFET evaluation indicated that electron trapping and interface state generation occur during the stress. Simulation confirmed that the degradation is caused mainly by the interface states generated in the oxide near the emitter-base junction.

Original languageEnglish
Pages140-143
Number of pages4
StatePublished - 1989
EventProceedings of the 1989 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 18 Sep 198919 Sep 1989

Conference

ConferenceProceedings of the 1989 Bipolar Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period18/09/8919/09/89

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