Temperature compensation technique of GaAs FET by rotating the gate orientation

Hidetoshi Furukawa*, Tsuyosi Tanaka, Takeshi Fukui, Kazuki Tateoka, Syunsuke Nagata, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The temperature compensation technique of GaAs power amplifier is demonstrated by rotating the gate orientation of the field effect transistor (FET). The temperature characteristics of [011]-, [001]- and [0-11]-oriented gate FETs are evaluated. Temperature coefficients of the threshold voltage are also plotted for the FETs. An almost zero temperature coefficient for [001]-oriented gate FET is seen, while [011]- and [0-11]-oriented gate FETs give negative and positive temperature coefficient, respectively. The gate orientation effect suggests that the threshold voltage shifts can be caused by the piezoelectric effect.

Original languageEnglish
Pages72-73
Number of pages2
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: 23 Jun 199725 Jun 1997

Conference

ConferenceProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period23/06/9725/06/97

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    Furukawa, H., Tanaka, T., Fukui, T., Tateoka, K., Nagata, S., & Ueda, D. (1997). Temperature compensation technique of GaAs FET by rotating the gate orientation. 72-73. Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, . https://doi.org/10.1109/DRC.1997.612479