The temperature compensation technique of GaAs power amplifier is demonstrated by rotating the gate orientation of the field effect transistor (FET). The temperature characteristics of -, - and [0-11]-oriented gate FETs are evaluated. Temperature coefficients of the threshold voltage are also plotted for the FETs. An almost zero temperature coefficient for -oriented gate FET is seen, while - and [0-11]-oriented gate FETs give negative and positive temperature coefficient, respectively. The gate orientation effect suggests that the threshold voltage shifts can be caused by the piezoelectric effect.
|Number of pages||2|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA|
Duration: 23 Jun 1997 → 25 Jun 1997
|Conference||Proceedings of the 1997 55th Annual Device Research Conference|
|City||Fort Collins, CO, USA|
|Period||23/06/97 → 25/06/97|