Temperature coefficient of poly-silicon TFT and its application on voltage reference circuit with temperature compensation in LTPS process

Ting Chou Lu*, Hsiao-Wen Zan, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The temperature coefficient (TC) of n-type polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this paper. The relationship between the TC and the activation energy is observed and explained. From the experimental results, it is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate the TC of TFTs. By using the diode-connected poly-Si TFTs with different channel widths, the first voltage reference circuit with temperature compensation for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a low-temperature poly-Si process, the output voltage of voltage reference circuit with temperature compensation exhibits a very low TC of 195 ppm/°C, between 25 °C and 125 °C. The proposed voltage reference circuit with temperature compensation can be applied to design precise analog circuits for system-on-panel or system-on-glass applications, which enables the analog circuits to be integrated in the active-matrix liquid crystal display panels.

Original languageEnglish
Pages (from-to)2583-2589
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number10
DOIs
StatePublished - 16 Oct 2008

Keywords

  • System on glass
  • System on panel
  • Temperature coefficient (TC)
  • Thin-film transistor (TFT)
  • Voltage reference circuit

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