Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu*, Hsiao-Wen Zan, Ming-Dou Ker, Wei Ming Huang, Kun Chih Lin, Ching Chieh Shin, Chao Chian Chiu, Chun Ting Liu

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

Original languageEnglish
Pages (from-to)1410-1413
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number3
DOIs
StatePublished - 30 Oct 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 20 May 200821 May 2008

Fingerprint Dive into the research topics of 'Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit'. Together they form a unique fingerprint.

  • Cite this