Temperature and Duration Effects on Microstructure Evolution during Copper Wafer Bonding

Kuan-Neng Chen*, A. Fan, C. S. Tan, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Interfacial morphologies during Cu wafer bonding at bonding temperatures of 300-400°C for 30 min followed by an optional 30-min or 60-min nitrogen anneal were investigated by means of transmission electron microscopy (TEM). Results showed that increased bonding temperature or increased annealing duration improved the bonding quality. Wafers bonded at 400°C for 30 min followed by nitrogen annealing at 400°C for 30 min, and wafers bonded at 350°C for 30 min followed by nitrogen annealing at 350°C for 60 min achieve the same excellent bonding quality.

Original languageEnglish
Pages (from-to)1371-1374
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number12
DOIs
StatePublished - 1 Jan 2003

Keywords

  • Copper (Cu)
  • Microstructure
  • Wafer bonding

Fingerprint Dive into the research topics of 'Temperature and Duration Effects on Microstructure Evolution during Copper Wafer Bonding'. Together they form a unique fingerprint.

Cite this