Temperature and current effects on small-geometry-contact resistance

Kaustav Banerjee; Ajith Amerasekera; Girish Dixit; Chen-Ming Hu

doi:10.1109/IEDM.1997.649477

Temperature and current effects on small-geometry-contact resistance

Kaustav Banerjee^*, Ajith Amerasekera, Girish Dixit, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

The effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICs. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface doping concentration, N. Behavior of W-plug and force-fill (FF) Al plug contacts have been investigated in detail. A simple model has been formulated which directly correlates contact resistance to temperature and N. Furthermore, thermal impedance of these contact structures have been extracted and a critical failure temperature demonstrated that can be used to design robust contact structures.

Original language	English
Pages (from-to)	115-118
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1997.649477
State	Published - 1 Dec 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 7 Dec 1997 → 10 Dec 1997

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title = "Temperature and current effects on small-geometry-contact resistance",

abstract = "The effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICs. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface doping concentration, N. Behavior of W-plug and force-fill (FF) Al plug contacts have been investigated in detail. A simple model has been formulated which directly correlates contact resistance to temperature and N. Furthermore, thermal impedance of these contact structures have been extracted and a critical failure temperature demonstrated that can be used to design robust contact structures.",

author = "Kaustav Banerjee and Ajith Amerasekera and Girish Dixit and Chen-Ming Hu",

year = "1997",

month = dec,

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doi = "10.1109/IEDM.1997.649477",

language = "English",

pages = "115--118",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

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note = "null ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - Temperature and current effects on small-geometry-contact resistance

AU - Banerjee, Kaustav

AU - Amerasekera, Ajith

AU - Dixit, Girish

AU - Hu, Chen-Ming

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICs. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface doping concentration, N. Behavior of W-plug and force-fill (FF) Al plug contacts have been investigated in detail. A simple model has been formulated which directly correlates contact resistance to temperature and N. Furthermore, thermal impedance of these contact structures have been extracted and a critical failure temperature demonstrated that can be used to design robust contact structures.

AB - The effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICs. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface doping concentration, N. Behavior of W-plug and force-fill (FF) Al plug contacts have been investigated in detail. A simple model has been formulated which directly correlates contact resistance to temperature and N. Furthermore, thermal impedance of these contact structures have been extracted and a critical failure temperature demonstrated that can be used to design robust contact structures.

UR - http://www.scopus.com/inward/record.url?scp=4244137736&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1997.649477

DO - 10.1109/IEDM.1997.649477

M3 - Conference article

AN - SCOPUS:4244137736

SP - 115

EP - 118

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 7 December 1997 through 10 December 1997

ER -

Temperature and current effects on small-geometry-contact resistance

Abstract

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