Temperature and current effects on small-geometry-contact resistance

Kaustav Banerjee*, Ajith Amerasekera, Girish Dixit, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

The effects of temperature and current on the resistance of small geometry silicided contact structures have been characterized and modeled for the first time. Both, temperature and high current induced self heating have been shown to cause contact resistance lowering which can be significant in the performance of advanced ICs. It is demonstrated that contact-resistance sensitivity to temperature and current is controlled by the silicide thickness which influences the interface doping concentration, N. Behavior of W-plug and force-fill (FF) Al plug contacts have been investigated in detail. A simple model has been formulated which directly correlates contact resistance to temperature and N. Furthermore, thermal impedance of these contact structures have been extracted and a critical failure temperature demonstrated that can be used to design robust contact structures.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 7 Dec 199710 Dec 1997

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