Technique for improving the distortion of GaAs variable attenuator IC using squeezed-gate FET structure

Kazuo Miyatsuji*, Hidetoshi Ishida, Takeshi Fukui, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

This paper describes a novel technique for improving the distortion of the GaAs attenuator IC using squeezed-gate structure of MESFETs. We found that the distortion was originated from the steep cutoff Id-Vgs curve of conventional FETs. To obtain smooth cutoff characteristics, we devised the squeezed-gate structure where the FETs with different threshold voltages are connected in parallel making use of the short channel effect. Fabricated IC shows 10 dB reduction of the 3rd order intermodulation distortion by optimizing the ratio of the gate widths.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium - San Francisco, CA, USA
Duration: 16 Jun 199619 Jun 1996

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