Tapered Cu pattern metallization by electrodeposition through mask

Shrane Ning Jenq*, Chi Chao Wan, Yung Yun Wang, Hung Wei Li, Po-Tsun Liu, Jing Hon Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number10
StatePublished - 29 Aug 2006

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