Tailor magnetic order and spin-polarized gap states of opto-spintronic compounds by carrier mediation

Chao Yao Yang, Yi Hsuan Chiu, Kai An Tsai, Hua Shu Hsu, Jun Xiao Lin, Pei Jung Ho, Po Wen Chen, Yung-Jung Hsu, Yuan-Chieh Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We investigate the role of carriers in the presence of oxygen vacancies (Vo) in mediating the ferromagnetic order and spin-polarized gap states of Cu-doped ZnO nanoparticles. We demonstrate the tuning of magnetic order via post-annealing under Ar/O2. Carrier (Vo)-rich condition (Ar-treatment) is found to favor higher magnetic order of the nanoparticles with enhanced thermal stability and wide spin-polarized gap states from ultra-violet (UV) to visible energy range. Conversely, carrier (Vo)-poor condition (O2-treatment) reduces resistance to thermal fluctuations and quenched spin-polarization due to lack of carrier mediation. The proposed method is effective to tailor the magnetic order as well as the wide polarized band-gap states, of oxide opto-spintronic compounds by finding the physical equivalency between charge carriers and spin electrons.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume460
DOIs
StatePublished - 15 Aug 2018

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