Synthesis, pore morphology, and dielectric property of mesoporous low-k material PSMSQ using a reactive high-temperature porogen, TEPSS

S. Y. Chiu, H. L. Hsu, M. L. Che, Leu-Jih Perng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high-temperature reactive porogen, triethoxy(polystyrene)silane (TEPSS) (Mw=3,500 g/mole), suitable for late-porogen removal integration scheme has been synthesized in p-xylene via atom transfer radical polymerization. TEPSS was then grafted onto poly(methyl-silsesquioxane) (MSQ) matrix (k=2.9) to circumvent possible phase separation between matrix and porogen in the hybrid approach and porogen aggregation. Our results shows porous low-k MSQ films possess uniform pore size, 24 nm for porosity up to 40%, primarily due to low PDI and reactive porogen, and the dielectric constant is decreased to 2.37 at 40% porosity. In addition, less porogen aggregation was observed at porogen loading ∼40 v%.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages629-638
Number of pages10
Edition4
DOIs
StatePublished - 2 Aug 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

Fingerprint Dive into the research topics of 'Synthesis, pore morphology, and dielectric property of mesoporous low-k material PSMSQ using a reactive high-temperature porogen, TEPSS'. Together they form a unique fingerprint.

Cite this