Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates

Yung Ching Chu, Chao An Jong, Yen Teng Ho, Ming Zhang, Po Yen Chien, Hung Ru Hsu, Hung Yi Chen, Yung Yi Tu, Krishna P. Pande, Jason C.S. Woo, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 102.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-55
Number of pages2
ISBN (Electronic)9781509007264
DOIs
StatePublished - 27 Sep 2016
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 12 Jun 201613 Jun 2016

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period12/06/1613/06/16

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    Chu, Y. C., Jong, C. A., Ho, Y. T., Zhang, M., Chien, P. Y., Hsu, H. R., Chen, H. Y., Tu, Y. Y., Pande, K. P., Woo, J. C. S., & Chang, E. Y. (2016). Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 54-55). [7577982] (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577982