Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates

Yung Ching Chu; Chao An Jong; Yen Teng Ho; Ming Zhang; Po Yen Chien; Hung Ru Hsu; Hung Yi Chen; Yung Yi Tu; Krishna P. Pande; Jason C.S. Woo; Edward Yi Chang

doi:10.1109/SNW.2016.7577982

Synthesis of wafer-scale WSe₂ by WO_x selenization on SiO₂ / Si substrates

Yung Ching Chu, Chao An Jong, Yen Teng Ho, Ming Zhang, Po Yen Chien, Hung Ru Hsu, Hung Yi Chen, Yung Yi Tu, Krishna P. Pande, Jason C.S. Woo, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Scalable synthesis of thin tungsten diselenide (WSe₂) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO₂) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe₂ layers. Raman spectroscopy confirms high quality crystal of WSe₂ is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 10².

Original language	English
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	54-55
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7577982
State	Published - 27 Sep 2016
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 12 Jun 2016 → 13 Jun 2016

Publication series

Name	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country	United States
City	Honolulu
Period	12/06/16 → 13/06/16

Access to Document

10.1109/SNW.2016.7577982

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Chu, Y. C., Jong, C. A., Ho, Y. T., Zhang, M., Chien, P. Y., Hsu, H. R., Chen, H. Y., Tu, Y. Y., Pande, K. P., Woo, J. C. S., & Chang, E. Y. (2016). Synthesis of wafer-scale WSe₂ by WO_x selenization on SiO₂ / Si substrates. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 54-55). [7577982] (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577982

Chu, Yung Ching ; Jong, Chao An ; Ho, Yen Teng ; Zhang, Ming ; Chien, Po Yen ; Hsu, Hung Ru ; Chen, Hung Yi ; Tu, Yung Yi ; Pande, Krishna P. ; Woo, Jason C.S. ; Chang, Edward Yi. / Synthesis of wafer-scale WSe₂ by WO_x selenization on SiO₂ / Si substrates. 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 54-55 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

@inproceedings{6ae25faac51f4e35befec667258a26a5,

title = "Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates",

abstract = "Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 102.",

author = "Chu, {Yung Ching} and Jong, {Chao An} and Ho, {Yen Teng} and Ming Zhang and Chien, {Po Yen} and Hsu, {Hung Ru} and Chen, {Hung Yi} and Tu, {Yung Yi} and Pande, {Krishna P.} and Woo, {Jason C.S.} and Chang, {Edward Yi}",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/SNW.2016.7577982",

language = "English",

series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "54--55",

booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

address = "United States",

note = "null ; Conference date: 12-06-2016 Through 13-06-2016",

}

Chu, YC, Jong, CA, Ho, YT, Zhang, M, Chien, PY, Hsu, HR, Chen, HY, Tu, YY, Pande, KP, Woo, JCS & Chang, EY 2016, Synthesis of wafer-scale WSe₂ by WO_x selenization on SiO₂ / Si substrates. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7577982, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., pp. 54-55, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 12/06/16. https://doi.org/10.1109/SNW.2016.7577982

Synthesis of wafer-scale WSe₂ by WO_x selenization on SiO₂ / Si substrates. / Chu, Yung Ching; Jong, Chao An; Ho, Yen Teng; Zhang, Ming; Chien, Po Yen; Hsu, Hung Ru; Chen, Hung Yi; Tu, Yung Yi; Pande, Krishna P.; Woo, Jason C.S.; Chang, Edward Yi.

2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 54-55 7577982 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates

AU - Chu, Yung Ching

AU - Jong, Chao An

AU - Ho, Yen Teng

AU - Zhang, Ming

AU - Chien, Po Yen

AU - Hsu, Hung Ru

AU - Chen, Hung Yi

AU - Tu, Yung Yi

AU - Pande, Krishna P.

AU - Woo, Jason C.S.

AU - Chang, Edward Yi

PY - 2016/9/27

Y1 - 2016/9/27

N2 - Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 102.

AB - Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 102.

UR - http://www.scopus.com/inward/record.url?scp=84994787710&partnerID=8YFLogxK

U2 - 10.1109/SNW.2016.7577982

DO - 10.1109/SNW.2016.7577982

M3 - Conference contribution

AN - SCOPUS:84994787710

T3 - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

SP - 54

EP - 55

BT - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 June 2016 through 13 June 2016

ER -